The effect of heating on InGaAs
Article Ecrit par: Nouri, A. ; Jardin, C. ; Lounis, Z. ; Bouslama, M. ; Monteil, Y. ; Dumont, H. ; Ghaffour, M. ;
Résumé: We have used Auger and electron energy loss spectroscopy to study the effect of temperature on InGaAs and InPO4 grown on InP. The thickness of InPO4 is of about 10 A whereas that of InGaAs is of about 800 A. InPO4 is of great interest because it protects InP from loss of stoichiometry when heated to 450 [deg]C. The InGaAs system heated at 450 [deg]C seems to be unstable; metallic indium appears on the surface in conjunction with formation of GaAs.
Langue:
Anglais
Thème
Physique
Mots clés:
InP
InGaAs
Thermal stability
InPO4
